RFD3055LE Fairchild Semiconductor, RFD3055LE Datasheet - Page 3

• Manufacturer Part Number: RFD3055LE
• Description: MOSFET N-CH 60V 11A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD3055LE

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 107 mOhm @ 8A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.107 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.107Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.0
0.4
1.2
0.8
0.6
0.2
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
100
0.1
0.01
0
10
0.1
1
0 0
2
1
10
1
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
T
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
J
TEMPERATURE
= MAX RATED T
25
V
DS
T
, DRAIN TO SOURCE VOLTAGE (V)
C
50
, CASE TEMPERATURE (
DS(ON)
C
SINGLE PULSE
10
75
10
= 25
-4
o
C
100
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
Unless Otherwise Specified
125
o
C)
100µs
1ms
10ms
10
-3
100
150
t, RECTANGULAR PULSE DURATION (s)
175
200
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
15
10
200
100
5
0
10
10
25
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FIGURE 5. PEAK CURRENT CAPABILITY
CASE TEMPERATURE
10
V
50
GS
-4
10
= 5V
-1
V
T
GS
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
10
75
= 4.5V
t, PULSE WIDTH (s)
-3
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
V
J
GS
= P
= 10V
DM
100
10
-2
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
x Z
C
I = I
θJC
= 25
10
P
1
25
DM
/t
0
10
125
x R
o
2
C
-1
θJC
o
o
C DERATE PEAK
C)
175 - T
t
+ T
150
1
t
150
C
10
2
C
0
175
10
10
1
1