FDS4465 Fairchild Semiconductor, FDS4465 Datasheet - Page 3
![MOSFET P-CH 20V 13.5A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS4465
Manufacturer Part Number
FDS4465
Description
MOSFET P-CH 20V 13.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4465.pdf
(5 pages)
Specifications of FDS4465
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 13.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 4.5V
Input Capacitance (ciss) @ Vds
8237pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
13.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
09+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4465TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4465
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4465
Manufacturer:
MXIC
Quantity:
10 000
Part Number:
FDS4465
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD
Quantity:
25 000
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
0
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
Figure 1. On-Region Characteristics.
1
-50
V
Figure 5. Transfer Characteristics.
V
DS
GS
-2.5V
V
I
= -5.0V
D
= -4.5V
GS
= -13.5A
-25
= -10V
-V
-V
-1.8V
0.5
DS
GS
0
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
0.5
-2.0V
25
T
A
= 125
50
1
o
C
-1.5V
75
-55
1
100
o
C
25
1.5
o
o
C)
C
125
150
1.5
175
2
Figure 6. Body Diode Forward Voltage Variation
0.025
0.015
0.005
0.0001
0.02
0.01
0.001
2.6
2.2
1.8
1.4
0.6
0.01
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
3
1
0
10
1
0
0
0
Drain Current and Gate Voltage.
V
GS
V
GS
= 0V
Gate-to-Source Voltage.
= -1.5V
T
0.2
-V
A
10
= 125
1
SD
-V
T
, BODY DIODE FORWARD VOLTAGE (V)
A
GS
= 25
, GATE TO SOURCE VOLTAGE (V)
o
C
-I
0.4
D
o
, DRAIN CURRENT (A)
C
25
-1.8V
20
o
2
C
-55
T
-2.0V
0.6
A
= 125
o
C
30
3
o
C
-2.5V
0.8
I
D
40
= -6.3A
4
FDS4465 Rev C1 (W)
-4.5V
1
50
1.2
5