FDS4465 Fairchild Semiconductor, FDS4465 Datasheet - Page 2
![MOSFET P-CH 20V 13.5A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS4465
Manufacturer Part Number
FDS4465
Description
MOSFET P-CH 20V 13.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4465.pdf
(5 pages)
Specifications of FDS4465
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 13.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 4.5V
Input Capacitance (ciss) @ Vds
8237pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
13.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
09+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4465TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4465
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4465
Manufacturer:
MXIC
Quantity:
10 000
Part Number:
FDS4465
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD
Quantity:
25 000
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 50 °C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 105 °C/W when
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
= 25°C unless otherwise noted
=–4.5 V, I
= –16 V,
= V
= –5 V,
= –10 V,
= –10 V,
= 0 V, I
= 8 V,
= –8 V,
= –4.5 V,
= –2.5 V,
= –1.8 V,
= –4.5 V,
= –10V,
= –4.5 V,
= –4.5 V
= 0 V,
mounted on a .04 in
pad of 2 oz copper
Test Conditions
GS
, I
D
D
I
= –250 A
= –250 A
D
S
=–13.5A, T
= –2.1 A
V
V
V
I
I
I
V
V
I
GS
DS
D
D
D
I
I
R
D
DS
D
D
DS
GS
= –13.5 A
= –12 A
= –10.5 A
GEN
= –13.5 A,
2
= 0 V
= 0 V
= –13.5 A
= –1 A,
= 0 V
= –5 V
= 0 V,
= 6
(Note 2)
J
=125 C
Min
–0.4
–20
–50
c) 125 °C/W when mounted on a
minimum pad.
Typ Max Units
8237
1497
–0.6
–0.6
–12
750
300
140
6.7
8.0
9.8
9.0
70
20
24
86
20
11
3
–100
–1.5
10.5
–2.1
–1.2
100
480
224
120
8.5
–1
14
13
36
38
FDS4465 Rev C1 (W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A