FDS4465 Fairchild Semiconductor, FDS4465 Datasheet
FDS4465
Manufacturer Part Number
FDS4465
Description
MOSFET P-CH 20V 13.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4465.pdf
(5 pages)
Specifications of FDS4465
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 13.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 4.5V
Input Capacitance (ciss) @ Vds
8237pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
13.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
09+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4465TR
Available stocks
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Part Number
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Quantity
Price
Company:
Part Number:
FDS4465
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4465
Manufacturer:
MXIC
Quantity:
10 000
Part Number:
FDS4465
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD
Quantity:
25 000
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS4465
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JA
JC
Device Marking
STG
FDS4465
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
D
FDS4465
D
Device
Parameter
S
S
S
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
–13.5 A, –20 V. R
Fast switching speed
High performance trench technology for extremely
low R
High current and power handling capability
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–13.5
–20
–50
125
2.5
1.5
1.2
50
25
8
= 8.5 m @ V
= 10.5 m @ V
= 14 m @ V
4
3
2
1
March 2003
GS
GS
FDS4465 Rev C1 (W)
2500 units
GS
Quantity
= –1.8 V
= –4.5 V
= –2.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
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FDS4465 Summary of contents
Page 1
... Reel Size 13’’ March 2003 = 8 –4.5 V DS(ON 10 –2.5 V DS(ON –1.8 V DS(ON Ratings Units – –13.5 A –50 2.5 W 1.5 1.2 –55 to +175 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS4465 Rev C1 (W) ...
Page 2
... Typ Max Units –20 V –12 mV/ C –1 A 100 nA –100 nA –0.4 –0.6 –1 mV/ C 6.7 8.5 m 8.0 10.5 9.8 14 9.0 13 – 8237 pF 1497 pF 750 300 480 ns 140 224 ns 86 120 –2.1 A –0.6 –1 125 °C/W when mounted on a minimum pad. FDS4465 Rev C1 (W) ...
Page 3
... C 0.001 o -55 C 0.0001 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -1.5V -1.8V -2.0V -2.5V -4. DRAIN CURRENT ( -6. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4465 Rev C1 ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz C ISS OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 FDS4465 Rev C1 (W) 20 100 ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...