FDZ191P Fairchild Semiconductor, FDZ191P Datasheet - Page 5

• Manufacturer Part Number: FDZ191P
• Description: MOSFET P-CH 20V 3A 6WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ191P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ191PTR

FDZ191P Rev.F3 (W)
Typical Characteristics
0.01
0.1
2
1
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-2
T
Figure 12. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
t, RECTANGULAR PULSE DURATION (s)
-1
5
10
0
10
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
TJA
DM
10
1
/t
x R
2
2
TJA
t
1
+ T
t
2
A
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10
3