FDZ191P Fairchild Semiconductor, FDZ191P Datasheet

MOSFET P-CH 20V 3A 6WLCSP

FDZ191P

Manufacturer Part Number
FDZ191P
Description
MOSFET P-CH 20V 3A 6WLCSP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDZ191P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-WLCSP
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.085 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDZ191PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDZ191P
Manufacturer:
FSC
Quantity:
3 948
Part Number:
FDZ191P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDZ191P Rev.F3 (W)
FDZ191P
P-Channel 1.5V PowerTrench
-20V, -1A, 85m:
Features
„ Max r
„ Max r
„ Max r
„ Occupies only 1.5 mm
„ Ultra-thin package: less than 0.65 mm height when mounted
„ RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
TJA
TJA
area of 2 x 2 BGA
to PCB
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
1
= 85m: at V
= 123m: at V
= 200m: at V
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
S
D
BOTTOM
2
GS
S
S
of PCB area Less than 50% of the
GS
GS
= -4.5V, I
= -2.5V, I
= -1.5V, I
-Pulsed
FDZ191P
G
Device
PIN 1
PIN 1
D
D
D
= -1A
= -1A
= -1A
T
A
= 25°C unless otherwise noted
Parameter
Package
WL-CSP
TOP
1
®
General Description
Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and r
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low r
Application
„ Battery management
„ Load switch
„ Battery protection
WL-CSP MOSFET
Reel Size
7’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1b)
DS(on)
.
G
Tape Width
8mm
-55 to +150
Ratings
133
-20
-15
1.9
0.9
±8
65
-3
DS(on)
S
D
June 2009
. This advanced
www.fairchildsemi.com
5000 units
Quantity
Units
°C/W
°C
W
V
V
A

Related parts for FDZ191P

FDZ191P Summary of contents

Page 1

... Designed on Fairchild's advanced 1.5V PowerTrench process = -1A D with state of the art "low pitch" WLCSP packaging process, the = -1A D FDZ191P minimizes both PCB space and r WLCSP MOSFET embodies a breakthrough in packaging = -1A D technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low ...

Page 2

... TJA side of the solder ball defined for reference. For R TJB are guaranteed by design while R is determined by the user's board design. TJA 2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. FDZ191P Rev.F3( 25°C unless otherwise noted J Test Conditions I = -250PA ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 15 P PULSE DURATION = 300 DUTY CYCLE = 2.0%MAX - 125 - 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDZ191P Rev.F3 ( 25°C unless otherwise noted -2. -1. 2.5 3.0 3.5 4.0 75 100 125 150 ( 0. 1E 1E-4 2.0 2 ...

Page 4

... GS 1.5 1 CASE TEMPERATURE A Figure 9. Maximum Continuous Drain Current vs Ambient Temperature -10V SINGLE PULSE 0 Figure 11. Single Pulse Maximum Power Dissipation FDZ191P Rev.F3 ( 25°C unless otherwise noted -10V -15V -4.5V GS 100 125 150 PULSE WIDTH (s) 4 2000 1000 C iss C ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. FDZ191P Rev.F3 ( 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK TJA TJA www.fairchildsemi.com ...

Page 6

... FDZ191P Rev.F3 (W) 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDZ191P Rev.F3 (W) F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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