FDZ191P Fairchild Semiconductor, FDZ191P Datasheet - Page 3

• Manufacturer Part Number: FDZ191P
• Description: MOSFET P-CH 20V 3A 6WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ191P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ191PTR

FDZ191P Rev.F3 (W)
Typical Characteristics
15
12
16
14
12
10
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
Figure 3. Normalized On Resistance
0.0
0.5
9
6
3
0
8
6
4
2
0
Figure 1.
-50
Figure 5. Transfer Characteristics
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
V
V
0.5
DD
I
D
GS
-25
vs Junction Temperature
= -1A
= -5V
-V
-V
= -4.5V
T
DS
GS
J
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
, JUNCTION TEMPERATURE
1.0
T
1.0
On Region Characteristics
, DRAIN TO SOURCE VOLTAGE (V)
J
, GATE TO SOURCE VOLTAGE (V)
0
= 125
1.5
o
25
V
V
C
V
GS
GS
GS
T
= -3.5V
= -2.5V
= -4.5V
J
2.0
1.5
P
50
= -55
s
T
T
J
o
J
= 25
2.5
C
75
= 25°C unless otherwise noted
P
s
o
C
3.0
2.0
100
V
V
GS
(
GS
o
C
= -1.5V
)
= -2.0V
3.5
125
4.0
2.5
150
3
1E-3
1E-4
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
240
200
160
120
60
10
80
40
1
0.0
Figure 2.
Figure 4.
Forward Voltage vs Source Current
0
1
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
V
T
SD
T
0.2
GS
J
2
J
-V
= 0V
, BODY DIODE FORWARD VOLTAGE (V)
= 125
= 25
= -1.5V
GS
Normalized On-Resistance
On-Resistance vs Gate to
I
-I
, GATE TO SOURCE VOLTAGE (V)
D
o
D
Source Voltage
o
4
C
2
= - 0.5A
Source to Drain Diode
C
0.4
, DRAIN CURRENT(A)
V
GS
= -2.0V
6
0.6
T
J
T
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
= 125
J
T
= -55
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
8
3
J
= 25
0.8
o
C
o
C
o
10
C
1.0
V
V
V
GS
GS
GS
12
4
= -3.5V
= -2.5V
= -4.5V
www.fairchildsemi.com
1.2
14
P
s
P
s
1.4
16
5