FDN339AN Fairchild Semiconductor, FDN339AN Datasheet - Page 3

MOSFET N-CH 20V 3A SSOT3

FDN339AN

Manufacturer Part Number
FDN339AN
Description
MOSFET N-CH 20V 3A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDN339AN

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
700pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
0726
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN339ANTR

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Manufacturer
Quantity
Price
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Manufacturer:
Fairchild Semiconductor
Quantity:
39 136
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Manufacturer:
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Quantity:
4
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Quantity:
20 000
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Typical Characteristics
20
16
12
8
4
0
20
16
12
8
4
0
0
1.6
1.4
1.2
0.8
0.6
0.5
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
V
Figure 3. On-Resistance Variation
GS
DS
3.0V
V
= 5V
= 4.5V
GS
I
D
0.5
= 3A
= 4.5V
-25
1
V
V
DS
2.5V
GS
with Temperature.
, DRAIN TO SOURCE VOLTAGE (V)
T
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
1
25
1.5
1.5
50
2.0V
T
A
= -55
2
75
o
2
C
1.5V
100
o
25
C)
o
C
2.5
2.5
125
125
o
C
150
3
3
0.08
0.06
0.04
0.02
0.1
0.0001
0.001
0
1.8
1.6
1.4
1.2
0.8
0.01
100
0.1
2
1
1
10
with Drain Current and Gate Voltage.
1
0
Figure 6. Body Diode Forward Voltage
Figure 2. On-Resistance Variation
0
Figure 4. On-Resistance Variation
V
GS
V
GS
with Gate-to-Source Voltage.
= 0V
Variation with Source Current
= 2.0V
0.2
V
4
V
SD
2
T
GS
2.5V
, BODY DIODE FORWARD VOLTAGE (V)
A
and Temperature.
, GATE TO SOURCE VOLTAGE (V)
= 125
I
D
3.0V
, DRAIN CURRENT (A)
0.4
o
C
8
3.5V
25
3
o
0.6
T
C
A
= 125
12
4.0V
-55
T
A
o
= 25
o
C
C
0.8
o
C
4.5V
16
4
I
D
1
FDN339AN Rev. C
= 1.5A
20
1.2
5

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