FDN339AN Fairchild Semiconductor, FDN339AN Datasheet - Page 2

• Manufacturer Part Number: FDN339AN
• Description: MOSFET N-CH 20V 3A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN339AN

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 700pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0726
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN339ANTR

Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
Notes:
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
2: Pulse Test: Pulse Width
BV
V
FS
1: R
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
surface of the drain pins. R
Scale 1 : 1 on letter size paper
GS(th)
DSS
T
T
DSS
J
J
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
a) 250 C/W when
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage V
mounted on a 0.02 in
Pad of 2 oz. Cu.
JC
is guaranteed by design while R
300 s, Duty Cycle
Parameter
(Note 2)
2
(Note 2)
2.0%
T
CA
A
b) 270 C/W on a minimum
is determined by the user's board design.
= 25°C unless otherwise noted
mounting pad of 2 oz. Cu.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
2)
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A,Referenced to 25 C
= 250 A,Referenced to 25 C
= 0 V, I
= 16 V, V
= 8 V, V
= -8 V, V
= V
= 4.5 V, I
= 4.5 V, I
= 2.5 V, I
= 4.5 V, V
= 5 V, I
= 10 V, V
= 10 V, I
= 4.5 V, R
= 10 V, I
= 4.5 V
= 0 V, I
Test Conditions
GS
, I
D
D
S
D
DS
D
D
DS
= 3 A
= 0.42 A
= 250 A
GS
= 250 A
D
D
D
GS
DS
GEN
= 3 A,
= 1 A,
= 0 V
= 3 A
= 3 A, T
= 2.4 A
= 0 V
= 0 V
= 0 V,
= 5 V
= 6
J
=125 C
(Note
Min
0.4
20
10
0.029
0.040
0.039
Typ
0.85
0.65
700
175
1.2
1.9
14
11
85
10
18
-3
8
5
7
Max Units
0.035
0.061
0.050
-100
0.42
100
1.5
1.2
16
18
29
10
10
1
FDN339AN Rev. C
mV/ C
mV/ C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A