FDN339AN Fairchild Semiconductor, FDN339AN Datasheet
FDN339AN
Manufacturer Part Number
FDN339AN
Description
MOSFET N-CH 20V 3A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN339AN.pdf
(5 pages)
Specifications of FDN339AN
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
700pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
0726
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN339ANTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN339AN
Manufacturer:
Fairchild Semiconductor
Quantity:
39 136
Part Number:
FDN339AN
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
1999 Fairchild Semiconductor Corporation
FDN339AN
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
•
•
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Outlines and Ordering Information
Symbol
DC/DC converter
D
Load switch
DSS
GSS
D
J
, T
JA
JC
Device Marking
stg
SuperSOT -3
339
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
G
- Continuous
- Pulsed
FDN339AN
Parameter
Device
S
T
A
= 25°C unless otherwise noted
Reel Size
7’’
Features
•
•
•
•
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
3 A, 20 V. R
Low gate charge (7nC typical).
High performance trench technology for extremely
low R
High power and current handling capability.
DS(ON)
R
.
DS(ON)
DS(ON)
G
Tape Width
= 0.050
= 0.035
-55 to +150
Ratings
8mm
D
0.46
250
0.5
20
20
75
3
8
@ V
@ V
S
GS
GS
= 2.5 V.
November 1999
= 4.5 V
Quantity
3000 units
Units
FDN339AN Rev. C
C/W
C/W
W
V
V
A
C
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Datasheet:
FDN339AN Summary of contents
Page 1
... A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Device Reel Size FDN339AN 7’’ November 1999 = 0.035 @ V = 4.5 V DS(ON 0.050 @ V = 2.5 V. DS(ON Ratings Units 0.5 W 0.46 -55 to +150 C 250 C/W 75 C/W Tape Width Quantity 8mm 3000 units FDN339AN Rev. C ...
Page 2
... MHz 4 GEN 4 0.42 A (Note determined by the user's board design 270 C minimum mounting pad of 2 oz. Cu. 2.0% Min Typ Max Units mV 100 nA -100 nA 0.4 0.85 1 mV/ C 0.029 0.035 0.040 0.061 0.039 0.050 700 pF 175 1.2 nC 1.9 nC 0.42 A 0.65 1.2 V FDN339AN Rev. C ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current = 2.0V 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDN339AN Rev 1.2 ...
Page 4
... Transient themal response will change depending on the circuit board design 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE o R =270 C = 0.01 0 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 300 FDN339AN Rev. C ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...