FDC638P Fairchild Semiconductor, FDC638P Datasheet - Page 2

• Manufacturer Part Number: FDC638P
• Description: MOSFET P-CH 20V 4.5A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC638P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 48 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1160pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.048 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Transistor Type: MOSFET
• Max Voltage Vds: 20V
• On State Resistance: 0.045ohm
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: Super-SOT
• No. Of Pins: 6
• Svhc: Cobalt
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC638PTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
the drain pins. R
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
JA
DSS
GS(th)
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
(Note 2)
a)
(Note 2)
CA
78°C/W when
mounted on a 1in
of 2 oz copper
is determined by the user's board design.
2
T
pad
A
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A,Referenced to 25 C
= –250 A,Referenced to 25 C
= 0 V, I
= –16 V, V
= 8 V,
= –8 V,
= V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –10 V,
= –10 V,
= –5 V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V, I
Test Conditions
GS
, I
D
D
= –250 A
S
= –250 A
D
= –1.3 A
V
V
= –4.5 T
I
I
V
I
GS
DS
D
D
D
V
I
I
R
DS
D
D
= –4.5 A
= –3.8 A
GS
GEN
= –4.5 A,
DS
= –4.5 A
= –1 A,
= 0 V
= 0 V
= 0 V
= 0 V,
= –5 V
= 6
J
=125 C
(Note 2)
Min
–0.4
–20
–20
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
–0.73
1160
Typ
–0.8
–14
195
105
2.2
1.5
39
52
54
15
12
33
12
10
3
9
Max Units
–100
–1.5
–1.3
–1.2
100
–1
48
65
72
22
18
53
22
14
FDC638P Rev F (W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A