FDC638P Fairchild Semiconductor, FDC638P Datasheet

MOSFET P-CH 20V 4.5A SSOT-6

FDC638P

Manufacturer Part Number
FDC638P
Description
MOSFET P-CH 20V 4.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC638P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
48 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1160pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.048 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Transistor Type
MOSFET
Max Voltage Vds
20V
On State Resistance
0.045ohm
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
Super-SOT
No. Of Pins
6
Svhc
Cobalt
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC638PTR

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This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Mendoza, Joseph
E-mail: Joseph.Mendoza@notes.fairchildsemi.com
Phone: 63-32-400534
Implementation of change:
Expected 1st Device Shipment Date: 2007/11/24
Earliest Year/Work Week of Changed Product: D0744
Change Type Description: Die Attach Method
Description of Change (From): TiNiAg Backmetal and eutectic die attach process
Description of Change (To): TiNiAg backmetal and skip cure adhesive die attach process
Reason for Change : Process and Device improvement
Qual/REL Plan Numbers : Q20070126
Qualification :
Adhesive Die Attach and TiNiAg backmetal Qualification builds for SSOT-6L pass
assembly level and reliability stress test requirements. Adhesive Die Attach process
and TiNiAg backmetal is recommended for use on SSOT-6L package.
Results/Discussion
Test: (Autoclave)
Lot
Q20070126AAACLV
Q20070126ABACLV
Q20070126ACACLV
Test: (Power Cycle)
Lot
Q20070126AAPRCL
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Device
FDC6401N
Technical Contact:
Name: Mendoza, Joseph
E-mail: Joseph.Mendoza@notes.fairchildsemi.com
Phone: 63-32-400534
Device
FDC6401N
FDC6401N
FDC6401N
5000-CYCLES
0/77
96-HOURS
0/77
0/77
0/77
10000-CYCLES 15000-CYCLES Failure Code
0/77
Date Issued On : 2007/05/11
Date Created : 2007/03/30
Failure Code
PCN# : Q1071307
Pg. 1

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FDC638P Summary of contents

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... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

... FDC6304P FDC6321C FDC634P_F073 FDC636P FDC638P_F073 FDC638P_NL FDC640P_F073 FDC640P_NL FDC642P_NB4N006 FDC654P FDC654P_NBGT007 FDC655BN FDC655BN_NL 0/77 0/77 0/77 1000 Failure Code 0/77 0/77 0/77 Failure Code Failure Code FDC6301N_NL FDC6303N FDC6320C FDC6321C_NL FDC634P_NF073 FDC636P_F073 FDC638P_NBAD009 FDC638P_SBAD006A FDC640P_NBAD004A FDC642P FDC642P_NF073 FDC654P_F073 FDC654P_NF073 FDC655BN_F073 FDC658AP Pg. 2 ...

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