FDC638P Fairchild Semiconductor, FDC638P Datasheet
FDC638P
Manufacturer Part Number
FDC638P
Description
MOSFET P-CH 20V 4.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC638P.pdf
(5 pages)
Specifications of FDC638P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
48 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1160pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.048 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Transistor Type
MOSFET
Max Voltage Vds
20V
On State Resistance
0.045ohm
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
Super-SOT
No. Of Pins
6
Svhc
Cobalt
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC638PTR
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FDC638P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P -Channel 2.5V specified MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance
These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
Fairchild
.638
SuperSOT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
-6
Semiconductor’s
TM
D
D
– Continuous
– Pulsed
pin 1
FDC638P
S
Device
Parameter
D
D
G
advanced
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–4.5 A, –20 V. R
Low gate charge (10 nC typical)
High performance trench technology for extremely
low R
SuperSOT ™ –6 package: small footprint (72%
smaller than standard SO-8; low profile (1mm thick)
DS(ON)
2
3
3
1
Tape width
R
DS(ON)
DS(ON)
–55 to +150
Ratings
8mm
–4.5
–20
–20
1.6
0.8
78
30
= 48 m @ V
= 65 m @ V
8
September 2001
6
5
4
GS
GS
FDC638P Rev F1 (W)
= –4.5 V
= –2.5 V
3000 units
Quantity
Units
C/W
C/W
W
V
V
A
C
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FDC638P Summary of contents
Page 1
... SO-8; low profile (1mm thick =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ September 2001 = –4.5 V DS(ON –2.5 V DS(ON Ratings Units – –4.5 A –20 1.6 W 0.8 –55 to +150 C C/W 78 C/W 30 Tape width Quantity 8mm 3000 units FDC638P Rev F1 (W) ...
Page 2
... Min Typ Max Units –20 V –14 mV/ C –1 100 nA –100 nA –0.4 –0.8 –1 mV =125 – 1160 pF 195 pF 105 2.2 nC 1.5 nC –1.3 A –0.73 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper FDC638P Rev F (W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC638P Rev F ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 156 C/W JA P(pk ( Duty Cycle 100 FDC638P Rev F (W) 20 100 2 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...