FDN302P Fairchild Semiconductor, FDN302P Datasheet - Page 4

• Manufacturer Part Number: FDN302P
• Description: MOSFET P-CH 20V 2.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN302P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 882pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.055Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 2.4A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN302P; Q1148322

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
I
D
0.001
R
= -2.4A
SINGLE PULSE
0.01
R
DS(ON)
0.1
V
JA
0.0001
T
1
GS
A
= 270
= 25
LIMIT
=-4.5V
2
o
o
D = 0.5
C
C/W
-V
0.2
0.1
DS
0.05
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
Q
g
1
, GATE CHARGE (nC)
DC
SINGLE PULSE
4
0.001
10s
Figure 11. Transient Thermal Response Curve.
1s
100ms
6
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
V
DS
10ms
10
= -5V
0.01
1ms
8
-15V
-10V
100
10
0.1
t
1
, TIME (sec)
1400
1200
1000
20
15
10
800
600
400
200
5
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
2
-V
Power Dissipation.
C
DS
ISS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
4
t
1
C
, TIME (sec)
OSS
1
6
P(pk)
Duty Cycle, D = t
T
R
C
R
J
RSS
JA
- T
100
JA
10
(t) = r(t) + R
A
= 270 °C/W
t
8
1
= P * R
t
2
SINGLE PULSE
R
JA
T
A
100
= 270°C/W
= 25°C
JA
FDN302P Rev C(W)
10
1
JA
(t)
/ t
V
f = 1MHz
GS
2
1000
= 0 V
1000
12