FDN302P Fairchild Semiconductor, FDN302P Datasheet - Page 2

• Manufacturer Part Number: FDN302P
• Description: MOSFET P-CH 20V 2.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN302P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 882pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.055Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 2.4A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN302P; Q1148322

Notes:
1.
Scale 1 : 1 on letter size paper
2.
Electrical Characteristics
Symbol
Off Characteristics
BV
=== T
I
I
I
On Characteristics
V
=== T
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
R
the drain pins. R
Pulse Test: Pulse Width =300 s, Duty Cycle =2.0%
GS(th)
DSS
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 250 C/W when mounted on a
0.02 in
Parameter
2
pad of 2 oz. copper.
(Note 2)
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
T
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
A
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
= 25°C unless otherwise noted
= 0 V, I
= –16 V,
= 12 V,
= –12 V
= V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –5 V,
= –10 V,
= –10 V,
= –4.5 V,
= –10 V,
= –4.5 V
= 0 V,
GS
Test Conditions
, I
D
D
I
= –250 A
= –250 A
S
D
= –0.42
V
V
V
b) 270°C/W when mounted on a
= –2.4A, T
I
I
V
I
GS
DS
DS
D
D
V
I
I
R
D
D
D
minimum pad.
GS
DS
= –2.4 A
= –2 A
GEN
= –2.4 A,
= 0 V
= 0 V
= 0 V
= –2.4 A
= –1 A,
= 0 V,
= –5 V
= 6
(Note 2)
J
=125 C
Min
–0.6
–20
–10
Typ Max Units
–1.0
–0.7
–12
882
211
112
44
64
58
10
13
11
25
15
3
9
2
3
–0.42
–100
–1.5
–1.2
100
–1
55
80
84
23
20
40
27
14
FDN302P Rev C(W)
mV/ C
mV/ C
m
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A
V
A