FDN302P Fairchild Semiconductor, FDN302P Datasheet - Page 3

• Manufacturer Part Number: FDN302P
• Description: MOSFET P-CH 20V 2.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDN302P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 882pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.055Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 2.4A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN302P; Q1148322

Typical Characteristics
15
12
12
10
9
6
3
0
8
6
4
2
0
0.5
0
Figure 3. On-Resistance Variation with
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
DS
V
GS
= - 5V
-4.0V
V
I
= -4.5V
GS
D
= -2.4A
-25
= -4.5V
0.5
1
-V
-V
GS
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
-3.0V
, DRAIN-SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
Temperature.
-3.5V
1.5
1
25
-2.5V
50
T
A
1.5
= 125
2
75
-2.0V
o
C
100
o
-55
C)
2.5
2
o
C
25
125
o
C
2.5
150
3
Figure 6. Body Diode Forward Voltage Variation
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
0.0001
0.001
0.01
1.5
2.5
1.5
0.5
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
3
2
1
1
0
0
Drain Current and Gate Voltage.
T
V
A
GS
V
= 25
2
GS
= 0V
Gate-to-Source Voltage.
= -2.0V
o
C
0.2
-V
-V
3
SD
T
GS
A
, BODY DIODE FORWARD VOLTAGE (V)
2.5
, GATE TO SOURCE VOLTAGE (V)
= 125
-2.5V
-I
T
0.4
o
D
A
C
, DRAIN CURRENT (A)
= 125
3
6
o
C
-3.0V
25
0.6
o
C
3.5
-3.5V
9
-55
0.8
o
C
4
-4.0V
I
D
12
FDN302P Rev C(W)
= -1.2 A
1
4.5
-4.5V
1.2
15
5