FDMC8884 Fairchild Semiconductor, FDMC8884 Datasheet - Page 3

• Manufacturer Part Number: FDMC8884
• Description: MOSFET N-CH 30V 9A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8884

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 685pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC8884TR

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
40
30
20
10
Figure 3. Normalized On- Resistance
0
0
Figure 1.
-75
1
0
Figure 5. Transfer Characteristics
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
DS
I
V
D
-50
GS
= 10 V
= 5 V
= 9.0 A
vs Junction Temperature
= 10 V
T
V
V
-25
J
DS
GS
On-Region Characteristics
,
2
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
T
V
J
GS
1
= 150
0
= 6 V
V
GS
25
o
C
μ
= 4.5 V
s
3
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
J
T
= 25 °C unless otherwise noted
J
75
= -55
2
T
J
= 25
o
4
o
100 125 150
V
C )
C
GS
V
V
GS
GS
o
= 3.5 V
C
= 4 V
= 3 V
μ
s
5
3
3
0.001
0.01
100
0.1
10
80
70
60
50
40
30
20
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
0.0
Figure 2.
Figure 4.
2
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
0.2
V
V
SD
= 0 V
GS
, BODY DIODE FORWARD VOLTAGE (V)
V
T
= 3 V
Normalized On-Resistance
J
GS
On-Resistance vs Gate to
= 150
4
10
I
,
Source Voltage
0.4
D
Source to Drain Diode
I
GATE TO SOURCE VOLTAGE (V)
D
,
T
DRAIN CURRENT (A)
= 9.0 A
J
= 25
o
C
0.6
o
V
C
GS
= 3.5 V
6
20
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
0.8
J
V
= 125
GS
T
= 6 V
J
T
= -55
o
1.0
C
J
V
= 25
GS
8
30
o
C
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= 4.5 V
o
V
V
C
1.2
GS
GS
= 10 V
= 4 V
μ
s
μ
s
1.4
10
40