FDMC8884 Fairchild Semiconductor, FDMC8884 Datasheet - Page 4

• Manufacturer Part Number: FDMC8884
• Description: MOSFET N-CH 30V 9A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8884

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 685pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC8884TR

©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2
Typical Characteristics
0.01
100
10
0.1
20
10
Figure 7.
10
8
6
4
2
0
1
0.01
1
0.01
0
Figure 9.
I
D
Figure 11.
= 9.0 A
V
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
DD
J
C
θ
Switching Capability
JA
V
= MAX RATED
= 25
Gate Charge Characteristics
DS
= 10 V
T
t
= 125
0.1
J
Operating Area
3
AV
, DRAIN to SOURCE VOLTAGE (V)
Unclamped Inductive
= 100
o
V
Q
, TIME IN AVALANCHE (ms)
C
DD
g
0.1
Forward Bias Safe
, GATE CHARGE (nC)
o
C/W
= 15V
o
DS(on)
C
T
J
6
= 125
1
V
T
DD
J
o
= 20 V
= 25 °C unless otherwise noted
C
1
T
9
J
10
= 25
o
C
10 s
100 us
1 ms
10 ms
100 ms
1 s
DC
12
100
10
4
1000
1000
100
100
10
0.5
30
20
10
Figure 10.
50
1
10
0
0.1
25
Figure 12.
-4
Figure 8.
Limited by Package
f = 1 MHz
V
R
GS
Current vs Case Temperature
θ
JC
10
= 0 V
= 6.6
-3
V
50
V
Maximum Continuous Drain
Power Dissipation
DS
to Source Voltage
GS
o
C/W
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
T
10
Single Pulse Maximum
C
= 10V
t, PULSE WIDTH (s)
,
-2
CASE TEMPERATURE (
75
10
1
C
C
C
-1
rss
iss
oss
V
GS
1
100
= 4.5 V
SINGLE PULSE
R
T
A
θ
10
JA
= 25
o
C )
= 125
V
125
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o
10
GS
C
100
o
= 10 V
C/W
1000
150
30