FDMC8884 Fairchild Semiconductor, FDMC8884 Datasheet - Page 2

MOSFET N-CH 30V 9A POWER33

FDMC8884

Manufacturer Part Number
FDMC8884
Description
MOSFET N-CH 30V 9A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC8884

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
685pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC8884TR

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©2010 Fairchild Semiconductor Corporation
FDMC8884 Rev.E2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. E
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
ΔT
ΔT
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
AS
DSS
GS(th)
DSS
J
J
of 24 mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
°
C, L = 1 mH, I
a. 53 °C/W when mounted on
a 1 in
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
2
AS
pad of 2 oz copper
= 7 A, V
DD
= 30 V, V
I
I
V
V
V
I
V
V
V
V
D
D
D
V
V
V
V
V
f = 1 MHz
V
V
I
DS
GS
GS
GS
GS
GS
DD
F
DS
DD
GS
GS
GS
= 250 μA, V
= 250 μA, referenced to 25 °C
GS
GS
= 250 μA, referenced to 25 °C
= 9.0 A, di/dt = 100 A/μs
GS
= 24 V, V
= ±20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 15 V, V
= 0 V, I
= 0 V, I
= 10 V. 100% test at L = 3 mH, I
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
GS
GS
D
= 9.0 A
= 9.0 A
= 1.6 A
GS
GEN
DS
= 250 μA
= 9.0 A, T
= 9.0 A
= 9.0 A,
= 7.2 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
T
DD
J
= 9.0 A
= 125 °C
= 15 V
J
= 125 °C
(Note 2)
(Note 2)
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
AS
θJC
= 4 A .
is guaranteed by design while R
Min
1.4
30
0.86
0.76
Typ
513
110
5.0
1.8
2.2
1.9
10
13
1.4
15
16
22
22
24
76
22
-6
6
2
2
3
±100
Max
θCA
1.2
1.2
685
150
115
7.0
250
2.1
18
10
www.fairchildsemi.com
2.5
12
10
27
10
14
19
30
30
1
is determined by
mV/°C
mV/°C
Units
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
V
S

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