FDY102PZ Fairchild Semiconductor, FDY102PZ Datasheet - Page 5

• Manufacturer Part Number: FDY102PZ
• Description: MOSFET P-CH 20V 830MA SC89-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY102PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.83 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY102PZTR

©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
Typical Characteristics
0.02
0.1
1
2
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 12.
10
-2
SINGLE PULSE
R
T
JA
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 280
= 25 °C unless otherwise noted
o
C/W
10
-1
t, RECTANGULAR PULSE DURATION (sec)
5
10
0
10
NOTES:
DUTY FACTOR: D = t
PEAK T
1
J
= P
DM
x Z
P
TJA
DM
1
/t
100
x R
2
TJA
t
1
+ T
t
2
A
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