FDY102PZ Fairchild Semiconductor, FDY102PZ Datasheet - Page 4

• Manufacturer Part Number: FDY102PZ
• Description: MOSFET P-CH 20V 830MA SC89-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY102PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.83 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY102PZTR

©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
Typical Characteristics
10
10
10
10
10
Figure 7.
-1
-3
5
4
3
2
1
0
5
3
1
0.2
0.0
30
10
0
Figure 9. Gate Leakage Current
1
10
I
-3
D
V
= -0.83 A
GS
vs Gate to
= 0 V
0.5
-V
Gate Charge Characteristics
3
GS ,
V
DD
GATE TO SOURCE VOLTAGE (V)
T
J
= -8 V
1.0
Q
= 125
V
g
, GATE CHARGE (nC)
GS
Source Voltage
10
6
= -4.5 V
o
-2
C
V
Figure 11. Single Pulse Maximum Power Dissipation
1.5
DD
= -12 V
T
J
V
T
9
DD
J
= 25 °C unless otherwise noted
= 25
2.0
= -10 V
o
C
10
12
2.5
-1
t, PULSE WIDTH (sec)
3.0
15
4
10
0
0.01
500
0.1
100
10
2
1
1
0.1
0.1
Figure 10.
Figure 8.
f = 1 MHz
V
GS
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
T
= 0 V
JA
10
= MAX RATED
= 25
-V
-V
= 280
1
DS
DS
to Source Voltage
o
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
C
Operating Area
Capacitance vs Drain
o
Forward Bias Safe
C/W
DS(on)
1
1
100
SINGLE PULSE
R
T
A
T
JA
= 25
= 280
10
o
C
o
C/W
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C
C
C
rss
10 ms
100 ms
1 s
10 ms
10
1 ms
DC
iss
oss
1000
20
60