FDY102PZ Fairchild Semiconductor, FDY102PZ Datasheet - Page 3

• Manufacturer Part Number: FDY102PZ
• Description: MOSFET P-CH 20V 830MA SC89-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY102PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.83 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY102PZTR

©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
Typical Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
Figure 1.
0.0
0.5
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= -0.83 A
vs Junction Temperature
-V
= -5 V
= -4.5 V
DS
T
,
-25
J
On Region Characteristics
DRAIN TO SOURCE VOLTAGE (V)
0.5
-V
,
JUNCTION TEMPERATURE (
GS
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
, GATE TO SOURCE VOLTAGE (V)
T
V
V
1.0
GS
GS
J
GS
GS
0
= 125
= -2.0 V
= -1.8 V
= -4.5 V
= -2.5 V
25
o
P
1.0
C
s
T
J
50
T
= -55
J
= 25 °C unless otherwise noted
T
1.5
75
J
o
C
= 25
P
1.5
s
o
100 125 150
C )
o
V
C
GS
= -1.5 V
2.0
2.0
3
0.001
0.01
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.0
1.6
1.2
0.8
0.4
0.0
0.1
1
0.0
Figure 2.
1.0
Figure 4.
0.0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
GS
= -1.5 V
1.5
-V
0.2
= 0 V
SD
0.5
-V
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
On-Resistance vs Gate to
GS
-I
T
Source Voltage
D
J
Source to Drain Diode
2.0
,
,
= 125
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
V
0.4
GS
= -1.8 V
1.0
o
C
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
D
0.6
= -0.415 A
3.0
T
1.5
J
= -55
T
T
V
0.8
J
J
T
V
GS
J
= 125
= 25
GS
3.5
= 25
o
= -2.5 V
C
= -4.5 V
V
o
C
2.0
o
GS
o
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C
C
1.0
= -2.0V
4.0
P
P
s
s
2.5
4.5
1.2