BSO615NV Infineon Technologies, BSO615NV Datasheet - Page 8

• Manufacturer Part Number: BSO615NV
• Description: MOSFET DUAL N-CH 60V 3.1A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615NV

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO615NVINTR; SP000011097

Data Sheet
Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
(BR)DSS
GS
mJ
= 25
V
65
55
50
45
40
35
30
25
20
15
10
72
68
66
64
62
60
58
56
54
5
0
20
-60
BSO 615NV
= f ( T
40
-20
D
= 3.1 A, V
j
)
60
20
80
AS
60
DD
= f ( T
100
= 25 V
100
j
)
120
˚C
˚C
T
T
j
j
160
180
8
Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
BSO 615NV
Gate
2
D puls
)
0,2
4
V
DS max
= 3.1 A
6
8
BSO 615NV
10
0,8
V
12
DS max
nC
Q
05.99
Gate
15