BSO615NV Infineon Technologies, BSO615NV Datasheet - Page 6

• Manufacturer Part Number: BSO615NV
• Description: MOSFET DUAL N-CH 60V 3.1A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615NV

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO615NVINTR; SP000011097

Data Sheet
Typ. capacitances
C = f (V
parameter: V
Typ. output characteristics
I
parameter: t
D
= f ( V
10
10
10
pF
7.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
A
3
2
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
DS
BSO 615NV
DS
P
tot
)
l
)
k
j
i
= 2W
h
5
g
p
f
GS
e
= 80 µs
d
10
= 0 V, f = 1 MHz
15
20
25
c
a
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
V
V
DS
DS
10.0
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
35
5.0
C
C
C
is
os
rs
6
Drain-source on-resistance
R
parameter : I
DS(on)
0.36
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
-60
BSO 615NV
= f ( T
-20
D
j
)
= 3.1 A, V
20
98%
typ
60
GS
= 10 V
BSO 615NV
100
˚C
T
j
05.99
180