BSO615NV Infineon Technologies, BSO615NV Datasheet

MOSFET DUAL N-CH 60V 3.1A 8-SOIC

BSO615NV

Manufacturer Part Number
BSO615NV
Description
MOSFET DUAL N-CH 60V 3.1A 8-SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSO615NV

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 20µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO615NVINTR
SP000011097

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO615NV
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO615NV
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Data Sheet
SIPMOS
Features
Preliminary Data
Maximum Ratings, at T j = 25 ˚C, unless otherwise specified
Parameter
Continuous drain current, one channel active
Pulsed drain current, one channel active
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation, one channel active
T
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
Dual N Channel
Avalanche rated
d v /d t rated
A
jmax
A
= 3.1 A, V
= 3.1 A, V
= 25 ˚C
= 25 ˚C
= 150 ˚C
Small-Signal-Transistor
DS
DD
= 20 V, d i /d t = 200 A/µs,
= 25 V, R
GS
= 25
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Type
BSO 615NV
jmax
jmax
Product Summary
1
Symbol
I
I
E
I
E
d v /d t
V
P
T
T
D
Dpulse
AR
j
stg
AS
AR
GS
tot
Package
SO 8
-55 ... +150
-55 ... +150
55/150/56
Value
12.4
V
R
I
3.1
3.1
0.2
D
60
6
20
2
Ordering Code
Q67041-S2844
DS
DS(on)
BSO 615NV
0.12
3.1
60
Unit
A
mJ
A
mJ
kV/µs
V
W
˚C
05.99
V
A

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BSO615NV Summary of contents

Page 1

Preliminary Data SIPMOS Small-Signal-Transistor Features Dual N Channel Enhancement mode Avalanche rated rated Maximum Ratings ˚C, unless otherwise specified Parameter Continuous drain current, one channel active Pulsed drain current, one channel ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec cooling area Electrical Characteristics ˚C, unless otherwise specified Parameter ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance 3 DS(on)max D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics ˚C, unless otherwise specified Parameter ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold 0 Gate ...

Page 5

Power Dissipation tot A BSO 615NV 2.2 W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area parameter ...

Page 6

Typ. output characteristics parameter µs p BSO 615NV 7 tot 6.0 5.5 5.0 4.5 4.0 3.5 ...

Page 7

Typ. transfer characteristics I parameter µ DS(on) max Forward characteristics of reverse diode I = ...

Page 8

Avalanche Energy parameter 3 100 Drain-source ...

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