BSO615NV Infineon Technologies, BSO615NV Datasheet - Page 3

• Manufacturer Part Number: BSO615NV
• Description: MOSFET DUAL N-CH 60V 3.1A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615NV

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO615NVINTR; SP000011097

Data Sheet
Electrical Characteristics
Parameter
Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
G
G
G
G
= 33
= 33
= 33
= 33
= 30 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 0 V, V
= 0 V, V
= 0 V, V
2* I
D
* R
DS(on)max
DS
DS
DS
GS
GS
GS
GS
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
, I
D
= 3.1 A
D
D
D
D
= 3.1 A,
= 3.1 A,
= 3.1 A,
= 3.1 A,
3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
2.5
-
-
-
-
-
-
-
Values
typ.
275
5.8
90
50
11
25
25
35
BSO 615NV
max.
340
120
65
17
40
40
55
-
Unit
S
pF
ns
05.99