BSO615NV Infineon Technologies, BSO615NV Datasheet - Page 5

• Manufacturer Part Number: BSO615NV
• Description: MOSFET DUAL N-CH 60V 3.1A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615NV

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO615NVINTR; SP000011097

Data Sheet
Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
= f (T
10
10
10
2.2
W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
A
-1
-2
2
1
0
10
0
BSO 615NV
BSO 615NV
-1
DS
A
20
)
)
40
10
60
0
A
= 25 ˚C
80
100
10
120
1
˚C
DC
V
T
V
t p = 4.6µs
A
DS
160
10 µs
100 µs
1 ms
10 ms
10
2
5
Drain current
I
D
Transient thermal impedance
Z
parameter : D = t
thJA
= f ( T
K/W
10
3.4
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
10
10
A
= f (t
-1
0
2
1
0
10
A
BSO 615NV
BSO 615NV
)
-5
p
20
10
)
single pulse
-4
10
40
-3
p
10
/ T
60
-2
10
80
-1
10
100
0
BSO 615NV
10
120
1
10
D = 0.50
˚C
2
T
0.20
0.10
0.05
0.02
0.01
t
p
A
s
05.99
160
10
4