BSO615NV Infineon Technologies, BSO615NV Datasheet - Page 4

• Manufacturer Part Number: BSO615NV
• Description: MOSFET DUAL N-CH 60V 3.1A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615NV

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO615NVINTR; SP000011097

Data Sheet
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Parameter
at T j = 25 ˚C, unless otherwise specified
Dynamic Characteristics
Gate charge at threshold
V
Gate charge at V
V
Gate charge total
V
Gate plateau voltage
V
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
A
A
DD
DD
DD
DD
GS
R
R
= 25 ˚C
= 25 ˚C
= 30 V, I
= 30 V, I
= 40 V, I
= 40 V, I
= 40 V, I
= 40 V, I
= 0 V, I
F
F =
F
= I
D
D
D
D
= 6.2 A
l
S
S
= 0.1 A, V
= 3.1 A, V
= 3.1 A, V
= 3.1 A
, d i
, d i
gs
=7V
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
GS
GS
= 1 V
= 0 to 7 V
= 0 to 10 V
4
Symbol
Q
Q
Q
V
I
I
V
t
Q
S
SM
rr
(plateau)
SD
G(th)
g(7)
g
rr
min.
-
-
-
-
-
-
-
-
-
Values
0.25
typ.
0.95
0.08
7.4
9.7
4.7
45
-
-
BSO 615NV
max.
12.4
0.12
0.3
9.3
3.1
1.2
12
56
-
Unit
nC
nC
V
A
V
ns
µC
05.99