BSO615NV Infineon Technologies, BSO615NV Datasheet - Page 7

• Manufacturer Part Number: BSO615NV
• Description: MOSFET DUAL N-CH 60V 3.1A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615NV

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO615NVINTR; SP000011097

Data Sheet
Typ. transfer characteristics I
parameter: t
V
Forward characteristics of reverse diode
I
parameter: T
F
DS
= f ( V
10
10
10
10
14
10
A
A
8
6
4
2
0
-1
2 x I
2
1
0
0.0
0
BSO 615NV
SD
)
D
0.4
1
p
x R
j
= 80 µs
, t
0.8
DS(on) max
p
2
= 80 µs
1.2
T
T
T
T
3
j
j
j
j
= 25 ˚C typ
= 150 ˚C typ
= 25 ˚C (98%)
= 150 ˚C (98%)
1.6
4
2.0
5
D
= f ( V
2.4
V
V
V
V
GS
GS
SD
3.0
)
7
7
Gate threshold voltage
V
parameter : V
GS(th)
5.0
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
V
-60
= f ( T
-20
j
)
GS
= V
20
DS
, I
D
60
= 20 µA
BSO 615NV
100
V
T
j
05.99
160
max
typ
min