FDS4885C Fairchild Semiconductor, FDS4885C Datasheet

MOSFET N/P-CH DUAL 40V 8SOIC

FDS4885C

Manufacturer Part Number
FDS4885C
Description
MOSFET N/P-CH DUAL 40V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4885C

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
7.5A, 6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 20V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.017 Ohms
Forward Transconductance Gfs (max / Min)
14 S, 19 S
Drain-source Breakdown Voltage
+/- 40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.5 A, - 6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS4885C
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
FDS4885C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 500
FDS4885C
Dual N & P-Channel PowerTrench MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
2005 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
, T
JA
JC
Synchronous rectifier
Backlight inverter stage
Device Marking
STG
FDS4885C
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D1
Pin 1
D
D1
SO-8
D
advanced
D2
- Continuous
- Pulsed
D
FDS4885C
D2
Device
Parameter
S1
S
G1
PowerTrench
S
S2
S
G2
T
G
A
= 25°C unless otherwise noted
Reel Size
13”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
Q1:
7.5A, 40V
Q2:
–6A, –40V
Fast switching speed
High power and handling capability in a widely
used surface mount package
N-Channel
P-Channel
5
6
7
8
Q1
7.5
40
20
20
Tape width
R
R
R
R
–55 to +150
12mm
DS(on)
DS(on)
DS(on)
DS(on)
Q2
Q1
1.6
0.9
78
40
2
1
= 22m
= 35m
= 31m
= 42m
Q2
–20
40
–6
20
@ V
@ V
@ V
@ V
January 2005
4
3
2
1
GS
GS
GS
GS
FDS4885C Rev D(W)
= 10V
= 7V
= –10V
= –4.5V
2500 units
Quantity
Units
C/W
W
V
V
A
C

Related parts for FDS4885C

FDS4885C Summary of contents

Page 1

... Reel Size 13” January 2005 N-Channel R = 22m @ V = 10V DS(on 35m @ DS(on) GS P-Channel R = 31m @ V = –10V DS(on 42m @ V = –4.5V DS(on Units 7.5 – – 1.6 1 0.9 –55 to +150 C 78 C/W 40 Tape width Quantity 12mm 2500 units FDS4885C Rev D(W) ...

Page 2

... – – 125 7 – =– 1.0 MHz – 1.0 MHz mV 1.0 MHz GS Type Min Typ Max Units – mV – –1 All 100 nA All –100 –1 –1.6 –3 Q1 –9 mV 900 pF Q2 1560 Q1 200 pF Q2 215 Q1 100 pF Q2 110 FDS4885C Rev D(W) ...

Page 3

... A (Note 7 100 A/µ – 100 A/µ determined by the user's board design 125°/W when 2 mounted on a .02 in pad copper Type Min Typ Max Units 114 4 1 –1.3 Q1 0.7 1 –0.7 –1 135°/W when mounted on a minimum pad. FDS4885C Rev D(W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 6.5V 7.0V 8.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4885C Rev D( 1.2 ...

Page 5

... C rss Figure 8. Capacitance Characteristics. 50 100 s 40 1ms 10ms 0.001 0.01 10 100 Figure 10. Single Pulse Maximum MHz iss GS C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. FDS4885C Rev D(W) 40 1000 ...

Page 6

... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature 3.0V GS -3.5V -4.0V -4.5V -6.0V -10V DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4885C Rev D( 1.2 ...

Page 7

... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS GS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 FDS4885C Rev D(W) 40 1000 2 1000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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