FDS4885C Fairchild Semiconductor, FDS4885C Datasheet - Page 6

• Manufacturer Part Number: FDS4885C
• Description: MOSFET N/P-CH DUAL 40V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4885C

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.017 Ohms
• Forward Transconductance Gfs (max / Min): 14 S, 19 S
• Drain-source Breakdown Voltage: +/- 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A, - 6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2 (P-Channel)
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
Figure 13. On-Resistance Variation with
25
20
15
10
30
25
20
15
10
1
Figure 11. On-Region Characteristics.
5
0
5
0
-50
Figure 15. Transfer Characteristics.
1
0
V
V
V
GS
-6.0V
DS
GS
I
D
= -10V
= -5V
= -6A
= - 10V
-25
0.5
1.5
-V
-V
T
0
DS
J
GS
, JUNCTION TEMPERATURE (
-4.5V
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
1
, GATE TO SOURCE VOLTAGE (V)
2
25
-4.0V
1.5
50
2.5
2
T
75
A
-3.5V
= -55
3
2.5
o
o
C
100
C)
-3.0V
125
3.5
o
3
125
C
25
o
C
150
3.5
4
Figure 16. Body Diode Forward Voltage Variation
0.0001
0.001
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
0.01
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
100
with Source Current and Temperature.
0.1
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.1
10
1
2
1
0
0
2
Drain Current and Gate Voltage.
V
GS
T
V
A
= 0V
GS
= 25
Gate-to-Source Voltage.
= - 3.0V
0.2
-V
5
o
C
SD
-V
, BODY DIODE FORWARD VOLTAGE (V)
-3.5V
GS
4
, GATE TO SOURCE VOLTAGE (V)
T
T
-I
0.4
10
A
A
D
= 125
= 125
, DRAIN CURRENT (A)
-4.0V
o
o
C
C
0.6
15
6
25
-4.5V
o
C
0.8
20
-55
-6.0V
o
8
C
FDS4885C Rev D(W)
I
25
D
1
= -3A
-10V
10
1.2
30