FDS3912 Fairchild Semiconductor, FDS3912 Datasheet - Page 2

• Manufacturer Part Number: FDS3912
• Description: MOSFET N-CH DUAL 100V 3A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS3912

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 632pF @ 50V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Drain-Source Avalanche Ratings
W
I
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
DSS
GS(th)
DSS
T
T
DSS
J
J
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
(Note 2)
Single Pulse, V
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 250 A,Referenced to 25 C
= 250 A,Referenced to 25 C
= 25°C unless otherwise noted
= 10 V, I
= 0 V, I
= 80 V,
= 20 V,
= –20 V,
= V
= 10 V,
= 6 V,
= 10 V,
= 10V,
= 50 V,
= 50 V,
= 10 V,
= 50 V,
= 10 V
Test Conditions
GS
, I
D
D
D
= 250 A
= 250 A
= 3 A, T
DD
V
V
V
I
I
V
I
GS
DS
DS
D
D
V
I
I
R
D
= 50 V, I
D
D
GS
DS
= 3 A
= 2.8 A
GEN
= 3 A,
= 0 V
= 0 V
= 0 V
= 3 A
= 1 A,
= 0 V,
= 10 V
J
= 6
= 125 C
D
= 3 A
Min
100
10
2
Typ
108
175
632
2.5
8.5
4.5
2.4
3.8
–6
92
98
11
40
20
23
14
2
Max Units
–100
100
125
135
250
3.0
10
17
37
20
90
4
4
9
FDS3912 Rev C2(W)
mV/ C
mV/ C
m
nC
nC
nC
mJ
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
A