FDS3912 Fairchild Semiconductor, FDS3912 Datasheet

MOSFET N-CH DUAL 100V 3A 8SOIC

FDS3912

Manufacturer Part Number
FDS3912
Description
MOSFET N-CH DUAL 100V 3A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS3912

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
632pF @ 50V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
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Final PCN Q3073705 is an addendum for Final PCN Q1070805.
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Kalabkova, Ivana
E-mail: Ivana.Kalabkova@notes.fairchildsemi.com
Phone: 408-822-2187
Implementation of change:
Expected 1st Device Shipment Date: 2007/12/10
Earliest Year/Work Week of Changed Product: 0750
Change Type Description: Bond Wire Material Composition
Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.
Products will be shipped for an interim period of time with Au wire until the inventory is
depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949
certified.
Qual/REL Plan Numbers : Q20070231
Qualification :
This change will have no impact on any of the electrical parameters of the products
involved. The product test conditions, test limits and performance will remain
unchanged. Products will be built with the same level of quality and reliability as with
the existing products. The devices for qualification and qualification requirements are
defined in the table below.
Results/Discussion
Test: (Autoclave)
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: Rivero, Douglas
E-mail: Doug.Rivero@fairchildsemi.com
Phone: 1-408-822-2143
Date Issued On : 2007/10/12
Date Created : 2007/09/11
PCN# : Q3073705
Pg. 1

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FDS3912 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Lot Device Q20070231AAACLV FDS6912A Q20070231BAACLV FDS3570 Q20070231CAACLV FDS3672 Q20070231DAACLV FDS8870 Test: (High Temperature Gate Bias) Lot Device Q20070231AAHTGB FDS6912A Q20070231BAHTGB FDS3570 Q20070231CAHTGB FDS3672 Q20070231DAHTGB FDS8870 Test: (High Temperature Reverse Bias) Lot Device Q20070231AAHTRB FDS6912A Q20070231BAHTRB FDS3570 Q20070231CAHTRB FDS3672 Q20070231DAHTRB FDS8870 ...

Page 3

... Product Id Description : This change affects certain SO-8 products currently assembled in our Pg. 2 subcontractor site, GEM Electronics Ltd. The products affected by this change are listed below in the "Affected FSIDs" section. Affected FSIDs : FDS2572 FDS2582_NL FDS3590_F095 FDS3672 FDS3692 FDS3912_NL FDS4410_NL FDS4465_F095 FDS4480_NF40 FDS4501H_NL FDS4935A_NF40 FDS5670_NF40 FDS5680_NF40 FDS5690_F095 ...

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