FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 8

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

FDD3510H Rev.C
Typical Characteristics (Q2 P-Channel)
0.05
0.1
20
10
10
4
3
2
1
1
8
6
4
2
0
0.1
Figure 21. Gate Charge Characteristics
0
1
THIS AREA IS
LIMITED BY r
I
Figure 23. Unclamped Inductive
D
= -2.8A
Figure 25. Forward Bias Safe
2
V
-V
DD
Switching Capability
DS
t
= -30V
AV
4
, DRAIN to SOURCE VOLTAGE (V)
ds(on)
, TIME IN AVALANCHE(ms)
Operating Area
Q
SINGLE PULSE
T
R
T
g
J
C
θ
, GATE CHARGE(nC)
JC
= MAX RATED
= 25
V
6
DD
= 3.9
T
J
o
10
= -40V
= 125
C
o
C/W
8
1
o
C
V
10
DD
T
J
= -50V
= 25
12
o
C
100
100ms
100us
10ms
14
1ms
DC
200
10
16
T
8
J
= 25°C unless otherwise noted
20000
10000
1000
1000
100
100
Figure 24. Maximum Continuous Drain
Figure 26. Single Pulse Maximum Power
10
10
10
10
8
6
4
2
0
0.1
25
-6
Figure 22. Capacitance vs Drain
f = 1MHz
V
Current vs Case Temperature
GS
R
V
θ
10
GS
JC
= 0V
-V
-5
= 3.9
= -10V
50
DS
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
o
C
C/W
,
t, PULSE WIDTH (s)
10
CASE TEMPERATURE (
Dissipation
1
-4
V
GS
75
= -4.5V
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-3
I = I
V
100
25
SINGLE PULSE
R
GS
θ
JC
10
= -10V
10
o
= 3.9
-2
C DERATE PEAK
X
-------------------
o
125
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C )
–
o
T
C/W
125
C
C
x
10
C
T
oss
rss
iss
X
-1
= 25
o
C
150
100
1