FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 4

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

FDD3510H Rev.C
Typical Characteristics (Q1 N-Channel)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
15
10
20
15
10
Figure 3. Normalized On Resistance
5
0
Figure 1.
5
0
-75
Figure 5. Transfer Characteristics
0
2
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
V
DS
D
-50
GS
V
vs Junction Temperature
= 4.3A
= 5V
GS
= 10V
= 10V
V
T
V
-25
J
DS
On Region Characteristics
GS
,
T
1
JUNCTION TEMPERATURE (
3
,
J
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
= 150
0
o
C
V
25
GS
µ
s
2
= 6V
4
PULSE DURATION = X
DUTY CYCLE = X%MAX
50
T
J
= -55
T
75
J
o
= 25
C
3
o
5
100 125 150
C )
o
V
C
V
V
GS
GS
GS
= 4.5V
= 3.5V
= 4V
µ
s
4
6
T
J
4
= 25°C unless otherwise noted
0.001
0.01
300
200
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
20
10
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
GS
= 0V
V
= 3.5V
0.2
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
T
GS
J
Source Voltage
I
4
5
D
Source to Drain Diode
,
= 150
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT(A)
I
D
0.4
V
= 4.3A
GS
o
C
= 4V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
0.6
10
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
T
T
GS
J
J
= 125
= 25
= 4.5V
0.8
o
o
C
C
T
15
8
J
= -55
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T
J
V
1.0
V
= 25
GS
GS
µ
o
C
s
= 10V
= 6V
o
µ
C
s
1.2
10
20