FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 9
![IC MOSFET DUAL N/P 80V DPAK-4](/photos/5/44/54477/fdd3510h_sml.jpg)
FDD3510H
Manufacturer Part Number
FDD3510H
Description
IC MOSFET DUAL N/P 80V DPAK-4
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Specifications of FDD3510H
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
4.3A, 2.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 40V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (4 leads + tab)
Configuration
Dual Common Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A @ Q1 or 2.8 A @ Q2
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD3510HTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD3510H
Manufacturer:
FSC
Quantity:
20 000
Part Number:
FDD3510H
Manufacturer:
ON/安森美
Quantity:
20 000
FDD3510H Rev.C
Typical Characteristics (Q2 P-Channel)
0.001
0.001
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-6
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θ
JC
10
= 3.9
-3
10
-5
o
C/W
Figure 27. Transient Thermal Response Curve
SINGLE PULSE
R
(
Note 1b
Figure 28. Transient Thermal Response Curve
θ
JA
= 96
10
)
o
C/W
-2
10
-4
t, RECTANGULAR PULSE DURATION (sec)
t, RECTANGULAR PULSE DURATION (s)
10
T
-1
J
= 25°C unless otherwise noted
9
10
-3
1
10
-2
NOTES:
DUTY FACTOR: D = t
PEAK T
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
J
= P
= P
DM
DM
x Z
x Z
P
P
θJC
θJA
DM
DM
10
1
1
/t
/t
x R
x R
2
-1
2
100
θJC
θJA
t
t
1
1
+ T
+ T
t
t
2
2
A
C
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