FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet - Page 8

MOSFET N-CH DUAL 30V 8SOIC

FDS6900AS

Manufacturer Part Number
FDS6900AS
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6900AS

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 21 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A, 8.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6900AS
Manufacturer:
Fairchild Semiconductor
Quantity:
1 787
Part Number:
FDS6900AS
Manufacturer:
MAXIM
Quantity:
136
Part Number:
FDS6900AS
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDS6900AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6900AS
Quantity:
1 540
Part Number:
FDS6900AS-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6900AS_NL
Manufacturer:
WOOYUNG
Quantity:
10 523
Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 23
shows the reverse recovery characteristic of the
FDS6900AS.
For comparison purposes, Figure 24 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690).
Figure 24. Non-SyncFET (FDS6690) body
Figure 23. FDS6900AS SyncFET body
diode reverse recovery characteristic.
diode reverse recovery characteristic.
Time: 10nS/DIV
Time: 10nS/DIV
(continued)
This diode
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 25. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
0.000001
0.00001
0.0001
0.001
0.01
0
5
V
DS
, REVERSE VOLTAGE (V)
10
125
100
25
15
o
o
o
C
C
C
20
FDS6900AS Rev B (X)
25
30

Related parts for FDS6900AS