FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet - Page 5

• Manufacturer Part Number: FDS6900AS
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6900AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A, 8.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2
10
0.01
100
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
1
Figure 7. Gate Charge Characteristics.
0
0.1
0.001
0.01
R
I
0.1
SINGLE PULSE
DS(ON)
R
D
0.0001
θ JA
1
=8.2A
V
T
GS
A
= 135
LIMIT
= 25
= 10V
o
o
C/W
C
3
V
D = 0.5
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
0.05
0.02
Q
0.01
1
g
, GATE CHARGE (nC)
V
DS
DC
SINGLE PULSE
0.001
= 10V
10s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
6
1s
Figure 11. Transient Thermal Response Curve.
100ms
15V
10ms
10
20V
1ms
0.01
9
100 µ s
100
12
0.1
t
1
, TIME (sec)
800
600
400
200
50
40
30
20
10
0
0
0.001
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
C
rss
0.01
5
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
C
10
oss
t
1
, TIME (sec)
15
1
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
- T
θJA
10
20
(t) = r(t) * R
100
A
= 135 °C/W
t
1
C
= P * R
t
2
iss
SINGLE PULSE
R
θ JA
FDS6900AS Rev B (X)
T
A
= 135°C/W
100
θJA
= 25°C
25
θJA
1
(t)
V
/ t
f = 1MHz
GS
2
= 0 V
1000
1000
30