FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet - Page 7

• Manufacturer Part Number: FDS6900AS
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6900AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A, 8.2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics Q1
10
0.01
Figure 20. Maximum Safe Operating Area.
100
8
6
4
2
0
0.1
10
Figure 18. Gate Charge Characteristics.
0.001
1
0
0.1
0.01
0.1
I
D
0.0001
1
R
= 6.9A
SINGLE PULSE
R
DS(ON)
θ JA
V
T
GS
A
= 135
= 25
2
LIMIT
= 10V
D = 0.5
o
o
0.2
C
C/W
0.1
0.05
V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
4
SINGLE PULSE
1
V
g
0.001
, GATE CHARGE (nC)
DS
DC
= 10V
10s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
6
1s
Figure 22. Transient Thermal Response Curve.
100ms
15V
10ms
10
8
0.01
1ms
20V
10
100 µ s
100
0.1
12
t
1
, TIME (sec)
800
600
400
200
50
40
30
20
10
0
0
0.001
Figure 19. Capacitance Characteristics.
0
C
1
rss
Figure 21. Single Pulse Maximum
0.01
5
V
Power Dissipation.
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
oss
0.1
10
10
t
1
, TIME (sec)
1
15
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
100
A
t
= 135
10
1
= P * R
20
t
2
C
SINGLE PULSE
R
iss
o
θ JA
C/W
T
θJA
A
FDS6900AS Rev B (X)
= 135°C/W
θJA
1
= 25°C
100
(t)
/ t
25
2
f = 1 MHz
V
GS
= 0 V
1000
1000
30