FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet - Page 7

• Manufacturer Part Number: FDS6986AS
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6986AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 7.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V Ohm @ Q1
• Forward Transconductance Gfs (max / Min): 25 S, 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: + /- 16 V @ Q1
• Continuous Drain Current: 6.5 A @ Q1
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics Q1
0.01
10
100
Figure 19. Maximum Safe Operating Area.
0.1
8
6
4
2
0
10
Figure 17. Gate Charge Characteristics.
1
0
0.01
I
SINGLE PULSE
D
R
θ JA
= 6.5A
V
R
T
GS
DS(ON)
A
0.001
= 135
0.01
= 25
= 10V
0.1
0.0001
1
3
LIMIT
o
o
C/W
C
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
D = 0.5
g
, GATE CHARGE (nC)
6
0.2
0.1
V
0.05
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.001
0.02
= 10V
0.01
1
15V
Figure 21. Transient Thermal Response Curve.
SINGLE PULSE
DC
9
10s
1s
100ms
20V
10ms
0.01
10
1ms
12
100µs
100
15
0.1
t
1
, TIME (sec)
50
40
30
20
10
1000
0
0.001
800
600
400
200
Figure 18. Capacitance Characteristics.
0
0
1
C
Figure 20. Single Pulse Maximum
rss
0.01
4
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
C
oss
0.1
t
1
8
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
R
R
J
θJA
- T
θJA
100
1
(t) = r(t) * R
A
t
12
= 135 °C/W
1
= P * R
t
2
C
iss
θJA
SINGLE PULSE
R
θJA
1
θ JA
(t)
/ t
T
10
FDS6986AS Rev A (X)
2
A
16
= 135°C/W
= 25°C
1000
V
f = 1MHz
GS
= 0 V
100
20