FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet - Page 5

• Manufacturer Part Number: FDS6986AS
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6986AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 7.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V Ohm @ Q1
• Forward Transconductance Gfs (max / Min): 25 S, 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: + /- 16 V @ Q1
• Continuous Drain Current: 6.5 A @ Q1
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
0.01
Figure 7. Gate Charge Characteristics.
SINGLE PULSE
R
I
D
θ JA
V
R
T
= 7.9A
GS
A
DS(ON)
= 135
= 25
= 10V
LIMIT
o
o
C/W
C
0.1
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
6
1
V
DS
DC
= 10V
10s
1s
100ms
15V
10ms
10
9
1ms
20V
100µs
100
12
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
rss
0.01
4
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
0.1
t
8
1
, TIME (sec)
1
12
C
iss
SINGLE PULSE
R
θ JA
T
FDS6986AS Rev A (X)
10
A
16
= 135°C/W
= 25°C
V
f = 1MHz
GS
= 0 V
100
20