FDS6986AS Fairchild Semiconductor, FDS6986AS Datasheet - Page 3

• Manufacturer Part Number: FDS6986AS
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6986AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 7.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V Ohm @ Q1
• Forward Transconductance Gfs (max / Min): 25 S, 15 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: + /- 16 V @ Q1
• Continuous Drain Current: 6.5 A @ Q1
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label.
Switching Characteristics
Q
Q
Q
Q
I
T
Q
T
Q
V
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
the drain pins. R
S
rr
rr
SD
θJA
g(TOT)
g
gs
gd
rr
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Total Gate Charge, Vgs = 10V
Total Gate Charge, Vgs = 5V
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
θJC
is guaranteed by design while R
Parameter
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
(Note 2)
θCA
is determined by the user's board design.
(continued)
Q2:
V
Q1:
V
I
d
I
d
V
V
F
F
iF
iF
DS
DS
GS
GS
= 10 A,
= 6.5 A,
/d
/d
= 15 V, I
= 15 V, I
= 0 V, I
= 0 V, I
t
t
= 300 A/µs
= 100 A/µs
Test Conditions
S
S
D
D
= 2.3 A
= 1.3 A
= 7.9 A
= 6.5 A
b)
T
A
= 25°C unless otherwise noted
125°C/W when
mounted on a
0.02 in
2 oz copper
(Note 3)
(Note 3)
(Note 2)
(Note 2)
2
pad of
Type Min Typ Max Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
5.6
6.5
2.0
2.3
1.5
2.1
0.6
0.8
10
12
15
20
12
c)
6
135°C/W when
mounted on a
minimum pad.
3.0
1.3
0.7
1.2
14
17
8
9
FDS6986AS Rev A (X)
nC
nC
nC
nC
nC
nC
ns
ns
A
V