FDD8424H Fairchild Semiconductor, FDD8424H Datasheet - Page 5

• Manufacturer Part Number: FDD8424H
• Description: MOSFET DUAL N/P-CH 40V TO252-4L
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8424H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 6.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A @ N Channel or 6.5 A @ P Channel
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Module Configuration: Dual
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Fall Time: 6 ns, 3 ns
• Rise Time: 13 ns, 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8424HTR

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Typical Characteristics (Q1 N-Channel)
100
0.1
10
10
10
30
0.001
1
1
8
6
4
2
0
Figure 7.
1
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
D
Figure 11. Forward Bias Safe
= 9A
0.01
Switching Capability
V
SINGLE PULSE
T
R
T
Gate Charge Characteristics
V
t
DS
AV
T
J
C
4
θ
DD
JC
Operating Area
J
Unclamped Inductive
,
= MAX RATED
= 25
DS(on)
, TIME IN AVALANCHE(ms)
Q
= 125
DRAIN to SOURCE VOLTAGE (V)
= 15V
= 4.1
g
,
o
GATE CHARGE(nC)
C
0.1
o
o
C
C/W
T
J
V
= 25
DD
8
10
= 25V
o
C
1
V
12
DD
10
= 20V
100us
10ms
10us
1ms
DC
100
80
16
T
J
= 25°C unless otherwise noted
5
10000
1000
2000
1000
100
Figure 10. Maximum Continuous Drain
100
30
25
20
15
10
10
30
25
5
0
10
0.1
Figure 12.
-5
Figure 8.
Current vs Case Temperature
R
f = 1MHz
V
θ
GS
JC
SINGLE PULSE
R
10
= 0V
= 4.1
θ
50
JC
V
-4
V
GS
DS
= 4.1
Power Dissipation
to Source Voltage
o
Single Pulse Maximum
T
= 10V
,
C/W
Capacitance vs Drain
C
DRAIN TO SOURCE VOLTAGE (V)
,
o
10
CASE TEMPERATURE (
C/W
-3
t, PULSE WIDTH (s)
75
1
Limited by Package
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-2
I = I
100
25
V
10
GS
V
o
GS
-1
C DERATE PEAK
150 T
----------------------- -
= 4.5V
o
= 10V
125
C )
10
125
–
C
C
www.fairchildsemi.com
C
10
C
rss
T
oss
iss
C
0
= 25
150
o
C
10
40
1