FDD8424H Fairchild Semiconductor, FDD8424H Datasheet - Page 12

MOSFET DUAL N/P-CH 40V TO252-4L

FDD8424H

Manufacturer Part Number
FDD8424H
Description
MOSFET DUAL N/P-CH 40V TO252-4L
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8424H

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A, 6.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (4 leads + tab)
Configuration
Dual Common Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
29 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A @ N Channel or 6.5 A @ P Channel
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Rohs Compliant
YES
Module Configuration
Dual
Continuous Drain Current Id
9A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Fall Time
6 ns, 3 ns
Rise Time
13 ns, 3 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8424HTR

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©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
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