FDD8424H Fairchild Semiconductor, FDD8424H Datasheet - Page 4

• Manufacturer Part Number: FDD8424H
• Description: MOSFET DUAL N/P-CH 40V TO252-4L
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8424H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A, 6.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A @ N Channel or 6.5 A @ P Channel
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Module Configuration: Dual
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Fall Time: 6 ns, 3 ns
• Rise Time: 13 ns, 3 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8424HTR

©2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
Typical Characteristics (Q1 N-Channel)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
60
50
40
30
20
10
-75
1.5
0
0
0
Figure 3. Normalized On -Resistance
Figure 1.
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
GS
V
V
I
-50
D
GS
DS
= 10V
= 9A
2.0
= 5V
= 10V
vs Junction Temperature
T
-25
V
V
J
GS
DS
, JUNCTION TEMPERATURE (
T
1
On- Region Characteristics
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
= 150
2.5
V
0
GS
o
= 4.5V
C
25
µ
3.0
s
2
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
50
T
J
= -55
3.5
T
75
J
= 25
o
C
3
100 125 150
o
o
C )
C
V
V
4.0
V
GS
GS
GS
= 4.0V
= 3.5V
= 3.0V
µ
s
4.5
4
T
J
= 25°C unless otherwise noted
4
0.001
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
50
40
30
20
10
60
1
Figure 4.
0.0
Figure 2.
0
2
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
T
GS
J
V
= 150
SD
10
= 0V
V
V
0.3
, BODY DIODE FORWARD VOLTAGE (V)
GS
GS
V
Normalized On-Resistance
On-Resistance vs Gate to
o
GS
, GATE TO SOURCE VOLTAGE (V)
I
C
= 3.5V
D
4
Source Voltage
Source to Drain Diode
, DRAIN CURRENT(A)
= 3.0V
I
20
D
= 9A
0.6
V
GS
30
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= 4.5V
T
T
J
T
V
J
0.9
= 125
J
GS
= 25
= -55
T
= 4.0V
40
J
o
o
= 25
C
C
o
C
8
o
V
C
1.2
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GS
50
= 10V
µ
s
µ
s
1.5
60
10