FDMA6023PZT Fairchild Semiconductor, FDMA6023PZT Datasheet - Page 5

• Manufacturer Part Number: FDMA6023PZT
• Description: MOSFET P-CH DUAL 20V 6MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA6023PZT

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 885pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-UMLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA6023PZTTR

©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
Typical Characteristics
0.01
4.5
3.0
1.5
0.0
0.1
20
10
0.005
Figure 7.
1
0.01
0.1
0
0.1
2
1
10
THIS AREA IS
LIMITED BY r
I
SINGLE PULSE
T
R
T
D
J
A
θ
Figure 9.
-4
= -3.6A
JA
= MAX RATED
= 25
D = 0.5
= 173
DUTY CYCLE-DESCENDING ORDER
-V
o
0.2
0.1
0.05
0.02
0.01
C
Gate Charge Characteristics
DS
o
4
C/W
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
Q
V
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
g
DD
Operation Area
, GATE CHARGE(nC)
Forward Bias Safe
1
10
= -5V
-3
8
SINGLE PULSE
R
θ
JA
V
T
DD
= 173
J
= -15V
= 25 °C unless otherwise noted
V
DD
o
C/W
10
10
= -10V
12
-2
1 ms
10 ms
100 ms
10 s
1 s
DC
t, RECTANGULAR PULSE DURATION (s)
16
50
10
-1
5
100
2000
1000
0.5
10
100
1
1
10
50
0.1
-4
Figure 10.
Figure 8.
f = 1MHz
V
GS
NOTES:
DUTY FACTOR: D = t
PEAK T
10
= 0V
-3
-V
to Source Voltage
DS
J
10
= P
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
t, PULSE WIDTH (s)
10
-2
Single Pulse Maximum
Power Dissipation
DM
x Z
10
P
θJA
DM
1
-1
1
/t
x R
2
θJA
t
1
1
+ T
t
100
2
A
SINGLE PULSE
R
T
A
V
θ
JA
10
GS
= 25
C
C
C
= 173
rss
oss
iss
= -4.5 V
o
C
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100
o
C/W
10
1000
1000
20