FDMA6023PZT Fairchild Semiconductor, FDMA6023PZT Datasheet - Page 2

• Manufacturer Part Number: FDMA6023PZT
• Description: MOSFET P-CH DUAL 20V 6MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA6023PZT

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 885pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-UMLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: -3.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 60mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA6023PZTTR

©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
∆T
∆T
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
V
V
f = 1 MHz
I
I
V
V
V
I
V
V
V
V
V
T
V
V
I
D
D
D
F
DD
GS
GS
J
DS
DS
GS
GS
GS
GS
GS
GS
GS
DD
GS
= -3.6 A, di/dt = 100 A/µs
= -250 µA, V
= -250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 125 °C
= 0 V to -4.5 V
= -10 V, V
= -10 V, I
= -4.5 V, R
= -16 V, V
= 0 V, I
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
= -4.5 V, I
= -5 V, I
DS
2
Test Conditions
, I
S
D
D
D
= -1.1 A
DS
GS
GS
D
D
D
D
D
= -3.6 A
GS
= -250 µA
= -3.6 A,
GEN
= -3.6 A
= -3.0 A
= -2.0 A
= -1.0 A
= -3.6 A,
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
DD
= -3.6 A
(Note 2)
= -10 V,
Min
-0.4
-20
-0.7
Typ
-0.5
-2.7
665
100
115
-12
1.4
5.2
33
15
40
49
60
70
58
15
13
11
75
47
12
Max
±10
-1.5
170
885
155
150
120
-1.1
-1.2
110
60
80
72
23
20
75
17
53
27
-1
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mV/°C
mV/°C
Units
mΩ
µA
µA
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
A
V