FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 5

• Manufacturer Part Number: FDG6332C_F085
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6332C_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA, 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ Q1
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A @ Q1 or 0.6 A @ Q2
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6332C_F085TR

Typical Characteristics: N-Channel
0.01
0.1
10
1
5
4
3
2
1
0
0.1
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
SINGLE PULSE
I
R
R
D
DS(ON)
= 0.7A
V
JA
T
GS
A
= 415
= 25
= 4.5V
LIMIT
o
o
C
C/W
0.4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
DC
V
0.8
1s
DS
100ms
= 5V
10ms
10
15V
1ms
100 s
1.2
10V
1.6
100
200
150
100
10
50
8
6
4
2
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
0.01
C
OSS
V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
0.1
t
1
, TIME (sec)
10
1
SINGLE PULSE
R
15
JA
FDG6332C_F085 Rev C2 (W)
T
10
A
= 415°C/W
= 25°C
V
f = 1MHz
GS
= 0 V
100
20