FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 3

• Manufacturer Part Number: FDG6332C_F085
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6332C_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA, 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ Q1
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A @ Q1 or 0.6 A @ Q2
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6332C_F085TR

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
PCB in a still air environment.
S
SD
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
Parameter
JA
is determined by the user's board design. R
Q1
Q2
T
A
V
V
= 25°C unless otherwise noted
GS
GS
= 0 V, I
= 0 V, I
Test Conditions
S
S
= 0.25 A
= –0.25 A
JA
(Note 2)
(Note 2)
= 415°C/W when mounted on a minimum pad of FR-4
Q1
Q2
Min
–0.77
Typ Max Units
0.74
–0.25
0.25
–1.2
1.2
FDG6332C_F085 Rev C2 (W)
A
V