FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet
FDG6332C_F085
Specifications of FDG6332C_F085
Available stocks
Related parts for FDG6332C_F085
FDG6332C_F085 Summary of contents
Page 1
... C unless otherwise noted A Parameter (Note 1) (Note 1) (Note 1) Reel Size 7’’ March 2009 devices have been designed Complementary Q1 Q2 Units 20 – 0.7 –0.6 2.1 –2 0.3 –55 to +150 415 Tape width Quantity 8mm 3000 units FDG6332C_F085 Rev C2 (W) offer C/W ...
Page 2
... A –1 100 nA 100 nA 0.6 1.1 1.5 V -0.6 –1.2 –1.5 –2.8 mV 180 300 m 400 293 442 247 300 420 470 630 700 400 2 –2 113 pF 114 5 1 1.7 3.4 1.1 1.5 nC 1.4 2 0.24 nC 0.3 0.3 nC 0.4 FDG6332C_F085 Rev C2 (W) ...
Page 3
... Pulse Test: Pulse Width < 300 s, Duty Cycle < 2. 25°C unless otherwise noted A Test Conditions 0. (Note –0. (Note determined by the user's board design 415°C/W when mounted on a minimum pad of FR Min Typ Max Units 0. –0.25 Q2 0.74 1.2 V –0.77 –1.2 FDG6332C_F085 Rev C2 (W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( =0. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG6332C_F085 Rev C2 ( 1.2 ...
Page 5
... C RSS 0 0 1.2 1.6 Figure 8. Capacitance Characteristics. 10 100 s 8 1ms 0.001 100 Figure 10. Single Pulse Maximum f = 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 415°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. FDG6332C_F085 Rev C2 (W) 20 100 ...
Page 6
... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.0V -3.5V -4.0V -4.5V 0 DRAIN CURRENT ( -0 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG6332C_F085 Rev C2 ( 1.2 ...
Page 7
... Figure 18. Capacitance Characteristics 100 s 1ms 100 0.001 Figure 20. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 415 C 0.01 0 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 415 °C/W JA P(pk ( Duty Cycle FDG6332C_F085 Rev C2 (W) 20 100 100 ...
Page 8
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...